The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Jan. 19, 2006
Olubunmi O. Adetutu, Austin, TX (US);
Dharmesh Jawarani, Round Rock, TX (US);
Randy W. Cotton, Pflugerville, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Dharmesh Jawarani, Round Rock, TX (US);
Randy W. Cotton, Pflugerville, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor process and apparatus provide a polysilicon structure () and source/drain regions () formed adjacent thereto in which a dual silicide scheme is used to form first silicide regions in the polysilicon, source and drain regions () using a first metal (e.g., cobalt). After forming sidewall spacers (), a second metal (e.g., nickel) is used to form second silicide regions in the polysilicon, source and drain regions () to reduce encroachment by the second silicide in the source/drain () and to reduce resistance in the polysilicon structure caused by agglomeration and voiding from the first silicide ().