Randy W Cotton

Title: Innovations of Randy W Cotton

Introduction

Randy W Cotton is a notable inventor based in Pflugerville, TX (US). He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to improving semiconductor devices.

Latest Patents

Randy's latest patents include a dual metal silicide scheme using a dual spacer process. This semiconductor process and apparatus provide a polysilicon structure and source/drain regions formed adjacent thereto, utilizing a dual silicide scheme. The first silicide regions are formed in the polysilicon, source, and drain regions using cobalt as the first metal. After forming sidewall spacers, nickel is employed to create second silicide regions, which help reduce encroachment and resistance in the polysilicon structure. Another patent focuses on a method of forming a semiconductor device with a dielectric layer that has a high dielectric constant. This method involves creating an interfacial layer over a semiconductor substrate and forming a dielectric layer with a high dielectric constant over it. The dielectric layer is then thinned, allowing for the formation of a transistor with a gate electrode layer and source/drain diffusions within the semiconductor substrate.

Career Highlights

Randy W Cotton is currently associated with Freescale Semiconductor, Inc., where he continues to innovate in the semiconductor industry. His work has contributed to advancements in semiconductor processes that enhance device performance and reliability.

Collaborations

Randy has collaborated with talented individuals such as Olubunmi O Adetutu and Dharmesh Jawarani, further enriching his work and contributions to the field.

Conclusion

Randy W Cotton's innovative patents and contributions to semiconductor technology highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor processes and devices.