The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
May. 25, 2010
Olubunmi O. Adetutu, Austin, TX (US);
Ted R. White, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a shared contact in a semiconductor device having a gate electrode corresponding to a first transistor and a source/drain region corresponding to a second transistor is provided. The method includes forming a first opening in a dielectric layer overlying the gate electrode and the source/drain region, wherein the first opening extends substantially to the gate electrode corresponding to the first transistor. The method further includes after forming the first opening, forming a second opening, contiguous with the first opening, in the overlying dielectric layer, wherein the second opening extends substantially to the source/drain region corresponding to the second transistor. The method further includes forming the shared contact between the gate electrode corresponding to the first transistor and the source/drain region corresponding to the second transistor by filling the first opening and the second opening with a conductive material.