Kawagoe, Japan

Nobuyoshi Kobayashi

This inventor holds 39 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Semiconductor Fabrication. Top assignees: Hitachi, Ltd., Asm IP Holding B.v., Asm Japan K.k.. Active years: 1985-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuyoshi Kobayashi. Retrieved from https://idiyas.com/inventor/nobuyoshi-kobayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 89.7

 

Average Co-Inventor Count = 4.8

ph-index = 15

Forward Citations = 2,494(Granted Patents)


Location History:

  • Hachioji, JP (1985 - 1989)
  • Kawagoe-shi, Saitama, JP (2001)
  • Tokyo, JP (2004 - 2019)
  • Saitama, JP (2019)
  • Kwagoe, JP (2020)
  • Kawagoe, JP (1991 - 2024)

Company Filing History:


Years Active: 1985-2025

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Areas of Expertise:
Topography-Selective Deposition
Dielectric Materials
Atomic Layer Etching
Insulation Film
Interconnect Structure
Semiconductor Device
Plasma Treatment
Dynamic Random Access Memory
Integrated Circuit
Surface Treatment
Metal Silicide Film
Superconducting Alloys
39 patents (USPTO):Explore Patents

Title: Innovations of Nobuyoshi Kobayashi: Pioneering Advances in Substrate Processing

Introduction

Nobuyoshi Kobayashi, a prolific inventor based in Kawagoe, Japan, has made significant contributions to the field of substrate processing with an impressive portfolio of 36 patents. His innovative methods have focused on enhancing the efficiency and precision of gap-filling techniques, which are crucial in various manufacturing processes.

Latest Patents

Among his latest patents, the "Methods for filling a gap and related systems and devices" stands out. This patent discloses a comprehensive approach to fill gap features in a substrate through several steps. The method involves placing the substrate, with its designated gap features, into a reaction chamber, where it undergoes a precise plasma treatment that inhibits the upper surface while preserving the integrity of the lower surface. Following this treatment, a silicon-containing material is selectively deposited onto the lower surface, ensuring an efficient filling process.

Another notable patent, "Method for fabricating layer structure having target topological profile," outlines a systematic approach to creating a layer structure with a specific topological profile. This process consists of depositing a dielectric layer on a chosen area of the substrate. The dielectric layer is ingeniously engineered to withstand fluorine and/or chlorine radicals during subsequent dry-etching conditions, allowing for controlled material removal and achieving the desired topology on the substrate.

Career Highlights

Nobuyoshi Kobayashi's career spans influential roles at leading companies, including Hitachi, Ltd. and ASM IP Holding B.V. His work in these prestigious organizations has propelled advancements in semiconductor technologies, showcasing his expertise in materials and processing techniques.

Collaborations

Throughout his career, Kobayashi has collaborated with notable colleagues, including Yoshitaka Nakamura and Takuya Fukuda. These partnerships have facilitated the exchange of ideas and innovations, contributing to the development of advanced methods in substrate processing.

Conclusion

With 36 patents to his name, Nobuyoshi Kobayashi stands as a prominent figure in the realm of innovations related to substrate processing. His latest patents showcase a commitment to advancing industry standards, demonstrating his pivotal role in the evolution of manufacturing technologies. Through his collaborations and career accomplishments, Kobayashi continues to influence the future of substrate processing and its applications across various sectors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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