The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Jul. 20, 2018
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Rene Henricus Jozef Vervuurt, Tokyo, JP;
Nobuyoshi Kobayashi, Kwagoe, JP;
Takayoshi Tsutsumi, Nagoya, JP;
Masaru Hori, Nissin, JP;
Assignee:
ASM IP HOLDING B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); C23C 16/02 (2006.01); B81C 1/00 (2006.01); C30B 31/00 (2006.01); C30B 33/08 (2006.01); C30B 33/12 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); B81C 1/00595 (2013.01); C23C 16/0245 (2013.01); C30B 31/00 (2013.01); C30B 33/08 (2013.01); C30B 33/12 (2013.01); H01L 21/3081 (2013.01); H01L 21/31053 (2013.01); H01L 21/31105 (2013.01); H01L 21/31127 (2013.01); H01L 21/32137 (2013.01);
Abstract
In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.