The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Nov. 19, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Zecheng Liu, Kanagawa, JP;

Sunja Kim, Hwaseong-si, KR;

Viljami Pore, Helsinki, FI;

Jia Li Yao, Hachiochi, JP;

Ranjit Borude, Nagoya, JP;

Bablu Mukherjee, Nagoya, JP;

René Henricus Jozef Vervuurt, Leuven, BE;

Takayoshi Tsutsumi, Nagoya, JP;

Nobuyoshi Kobayashi, Kawagoe, JP;

Masaru Hori, Nissin, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02315 (2013.01); C23C 16/0254 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); H01J 37/3244 (2013.01); H01J 37/32724 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/76224 (2013.01); H01J 37/32082 (2013.01); H01J 2237/332 (2013.01);
Abstract

Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.


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