The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

May. 23, 2018
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Masaru Zaitsu, Kanagawa, JP;

Nobuyoshi Kobayashi, Saitama, JP;

Akiko Kobayashi, Tokyo, JP;

Masaru Hori, Aichi, JP;

Takayoshi Tsutsumi, Aichi, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/02112 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01);
Abstract

A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.


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