IDiyas

For the Inventor, By the Inventor

Kawasaki, Japan

Masaru Zaitsu

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.7

ph-index = 7

Forward Citations = 2,751(Granted Patents)


Location History:

  • Tokyo, JP (2016)
  • Kanagawa, JP (2019)
  • Kawasaki, JP (2017 - 2023)

Company Filing History:

goldMedal11 out of 1,130 
 
Asm IP Holding B.v.
 patents
silverMedal1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2016-2023

Loading Chart...
11 patents (USPTO):
1. 11637011 - Method of topology-selective film formation of silicon oxide (2023-04-25),
2. 11127589 - Method of topology-selective film formation of silicon oxide (2021-09-21),
3. 10847365 - Method of forming conformal silicon carbide film by cyclic CVD (2020-11-24),
4. 10504742 - Method of atomic layer etching using hydrogen plasma (2019-12-10),
5. 10435790 - Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap (2019-10-08),
6. 10283353 - Method of reforming insulating film deposited on substrate with recess pattern (2019-05-07),
7. 9818601 - Substrate processing apparatus and method of processing substrate (2017-11-14),
8. 9793135 - Method of cyclic dry etching using etchant film (2017-10-17),
9. 9735024 - Method of atomic layer etching using functional group-containing fluorocarbon (2017-08-15),
10. 9627221 - Continuous process incorporating atomic layer etching (2017-04-18),
11. 9455138 - Method for forming dielectric film in trenches by PEALD using H-containing gas (2016-09-27),

Title: Masaru Zaitsu: Innovator in Silicon Oxide Film Formation

Introduction

Masaru Zaitsu is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of silicon oxide films. With a total of 11 patents to his name, Zaitsu's work has advanced the methods used in the semiconductor industry.

Latest Patents

Zaitsu's latest patents include innovative methods for topology-selective film formation of silicon oxide. One method involves designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film. This process allows for selective deposition or removal, resulting in a final silicon oxide film that meets specific design criteria. Another patent focuses on forming a dielectric film containing a Si—O bond in a trench on a substrate. This method includes conformally depositing an initial dielectric film and adjusting the impurity levels to achieve different chemical resistance properties in the target and non-target portions.

Career Highlights

Throughout his career, Masaru Zaitsu has worked with notable companies, including ASM IP Holding B.V. His expertise in semiconductor technology has positioned him as a key figure in the development of advanced film formation techniques.

Collaborations

Zaitsu has collaborated with talented individuals such as Atsuki Fukazawa and Hideaki Fukuda. These partnerships have contributed to the innovative advancements in his field.

Conclusion

Masaru Zaitsu's contributions to the semiconductor industry through his patents and collaborations highlight his role as a leading inventor. His work continues to influence the methods used in silicon oxide film formation, showcasing the importance of innovation in technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…