The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 25, 2023

Filed:

Oct. 12, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Atsuki Fukazawa, Tama, JP;

Masaru Zaitsu, Kawasaki, JP;

Pei-Chia Chen, Inagi, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/56 (2006.01); H01L 21/311 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0223 (2013.01); C23C 16/345 (2013.01); C23C 16/45525 (2013.01); C23C 16/56 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02249 (2013.01); H01L 21/02252 (2013.01); H01L 21/02274 (2013.01); H01L 21/31111 (2013.01);
Abstract

A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.


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