The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Jul. 14, 2016
Asm Ip Holding B.v., Almere, NL;
National University Corporation Nagoya University, Nagoya, JP;
Masaru Zaitsu, Kawasaki, JP;
Nobuyoshi Kobayashi, Kawagoe, JP;
Akiko Kobayashi, Tokyo, JP;
Masaru Hori, Nisshin, JP;
Hiroki Kondo, Nagoya, JP;
Takayoshi Tsutsumi, Nagoya, JP;
ASM IP Holding B.V, Almere, NL;
National University Corporation, Nagoya, JP;
Abstract
A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.