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Asm Japan K.k.

USPTO Granted Patents = 194

% Expired Patents = 4.6

Forward Citations = 35,283

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131 inventors (with patents filed for the assignee):

Nobuo Matsuki (36 out of 36 patents)

Atsuki Fukazawa (30 out of 80 patents)

Akira Shimizu (28 out of 122 patents)

4. Yoshinori Morisada (17 out of 17 patents)

5. Takayuki Yamagishi (17 out of 37 patents)

6. Kiyoshi Satoh (16 out of 16 patents)

7. Hideaki Fukuda (14 out of 65 patents)

8. Naoto Tsuji (13 out of 35 patents)

9. Satoshi Takahashi (12 out of 142 patents)

10. Masahiro Takizawa (11 out of 86 patents)

11. Masaei Suwada (11 out of 16 patents)

12. Yasuyoshi Hyodo (10 out of 15 patents)

13. Michael A Todd (9 out of 44 patents)

14. Kamal Kishore Goundar (9 out of 9 patents)

15. Yukihiro Mori (8 out of 118 patents)

Core Competencies:

Atomic Layer Deposition

Dielectric Films

Wafer Transport

CVD Apparatus

Plasma Treatment

Silicon Carbide

Interconnect Structures

Porous Insulation

Silazane-Based Films

Robot Diagnostic Module

High-Throughput Processing

Conformal Films

194 patents: Sort by Forward Citations

1. 9793148 - Method for positioning wafers in multiple wafer transport (2017-10-17),

2. 9312155 - High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules (2016-04-12),

3. 9171716 - Method of forming metal oxide hardmask (2015-10-27),

4. 8901016 - Method of forming metal oxide hardmask (2014-12-02),

5. 8845806 - Shower plate having different aperture dimensions and/or distributions (2014-09-30),

6. 8765233 - Method for forming low-carbon CVD film for filling trenches (2014-07-01),

7. 8758514 - Cluster type semiconductor processing apparatus (2014-06-24),

8. 8669185 - Method of tailoring conformality of Si-containing film (2014-03-11),

9. 8666551 - Semiconductor-processing apparatus equipped with robot diagnostic module (2014-03-04),

10. 8647722 - Method of forming insulation film using plasma treatment cycles (2014-02-11),

11. 8592005 - Atomic layer deposition for controlling vertical film growth (2013-11-26),

12. 8569184 - Method for forming single-phase multi-element film by PEALD (2013-10-29),

13. 8563443 - Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen (2013-10-22),

14. 8551892 - Method for reducing dielectric constant of film using direct plasma of hydrogen (2013-10-08),

15. 8470187 - Method of depositing film with tailored comformality (2013-06-25),

Company Overview

Asm Japan K.K. is a prominent player in the semiconductor processing industry, specializing in advanced technologies essential for the fabrication of semiconductor devices. The company focuses on key areas such as atomic layer deposition, dielectric films, and wafer transport systems. With expertise in CVD apparatus and plasma treatment, Asm Japan contributes significantly to the development of silicon carbide and interconnect structures, as well as innovative porous insulation solutions. Headquartered in Tokyo, the company plays a vital role in supporting the evolving needs of the semiconductor market.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

194 Patents

#359 in Tokyo

#720 in Japan

#4,350 in the World

Asm Japan K.k.

Forward Citations = 35,283

131 inventors:

Nobuo Matsuki (36 out of 36 patents)

Atsuki Fukazawa (30 out of 80 patents)

Akira Shimizu (28 out of 122 patents)

4. Yoshinori Morisada (17 out of 17 patents)

5. Takayuki Yamagishi (17 out of 37 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Asm Japan K.k.. Retrieved from https://idiyas.com/company/asm-japan-k-k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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