Tokyo, Japan

Hideaki Fukuda

This inventor holds 64 USPTO granted patents and 13 published patent applications and 2 EPO patents, primarily in Silicon Deposition (CPC class H01L). Top assignees: Asm IP Holding B.v., Asm Japan K.k., Hitachi, Ltd.. Active years: 1999-2026.

USPTO Granted Patents = 64 

% Patents Active = 85.9

 

Average Co-Inventor Count = 3.3

ph-index = 24

Forward Citations = 11,320(Granted Patents)

Forward Citations (Not Self Cited) = 10,838(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Odawara, JP (2008 - 2014)
  • Tama, JP (1999 - 2020)
  • Portland, OR (US) (2017 - 2022)
  • Hachioji, JP (2014 - 2023)
  • Numazu, JP (2020 - 2023)
  • Tokyo, JP (2014 - 2024)

Company Filing History:


Years Active: 1999-2026

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Areas of Expertise:
Silicon Nitride
ALD
Doped Silicon Oxide
Vacuum Interrupter
Thin Films
Dielectric Film
Atomic Layer Etching
Storage System
Data Transfer Control
Carbon Containing Materials
Electrode Material
Wafer-Supporting Device
64 patents (USPTO):Explore Patents

Title: Hideaki Fukuda: A Tokyo-based Innovator with 53 Patents

Introduction:

Hideaki Fukuda, a notable inventor based in Tokyo, Japan, has made significant contributions to the field of manufacturing and deposition methodologies. With an impressive portfolio of 53 patents, Fukuda's innovative techniques and novel ideas have shaped the industry. This article will delve into his latest patents, career highlights, collaborations, and emphasize the profound impact of his work.

Latest Patents:

Fukuda's recent patents highlight his expertise in advanced manufacturing techniques. One of his latest inventions is the "Method and Apparatus for Filling a Gap." This patent introduces a novel approach to filling gaps created during the manufacturing process of a feature on a substrate. By utilizing specific reactants with different doses, Fukuda's method ensures uniform deposition throughout the gap surface, enhancing overall product quality.

Another noteworthy patent by Fukuda is related to "Si Precursors for Deposition of SiN at Low Temperatures." This invention provides methods and precursors for depositing silicon nitride films using atomic layer deposition (ALD). These films exhibit uniform etch rates for both vertical and horizontal portions, making them ideal for complex structures like FinFETs and multiple-gate FETs.

Career Highlights:

Throughout his career, Fukuda has been associated with prominent companies in the industry. He has contributed extensively to the success of Asm IP Holding B.V. and Asm Japan K.K., two leading firms renowned for their innovation in the deposition and semiconductor manufacturing domains. Fukuda's valuable insights and expertise have significantly aided in the advancement of these companies.

Collaborations:

Collaborating with talented individuals in the field, Fukuda has worked closely with distinguished coworkers such as Atsuki Fukazawa and Suvi P Haukka. Their collective efforts have resulted in substantial breakthroughs and propelled the industry forward. These collaborations have fostered innovative thinking, creating synergies that lead to remarkable inventions.

Conclusion:

Hideaki Fukuda's valuable contributions to the field of manufacturing and deposition methodologies cannot be overstated. With an impressive portfolio of 53 patents and a strong presence in renowned companies, his expertise has shaped the industry in Tokyo and beyond. Fukuda's latest patents, including the method for filling gaps and the deposition of silicon nitride films, demonstrate his unrivaled innovation and commitment to advancing manufacturing processes. As the industry progresses, we can expect Fukuda's continued contributions to push boundaries and usher in new possibilities.

Profile summary based on public USPTO records.
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