The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Apr. 19, 2017
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Atsuki Fukazawa, Tama, JP;

Hideaki Fukuda, Portland, OR (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/24 (2006.01); C23C 16/50 (2006.01); C23C 16/40 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/24 (2013.01); C23C 16/34 (2013.01); C23C 16/40 (2013.01); C23C 16/50 (2013.01);
Abstract

An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR, or —OR.


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