The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Dec. 04, 2019
Applicant:
Asm International N.v., Almere, NL;
Inventors:
Noboru Takamure, Tokyo, JP;
Atsuki Fukazawa, Tokyo, JP;
Hideaki Fukuda, Tokyo, JP;
Antti Niskanen, Helsinki, FI;
Suvi Haukka, Helsinki, FI;
Ryu Nakano, Tokyo, JP;
Kunitoshi Namba, Tokyo, JP;
Assignee:
ASM International N.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02321 (2013.01); H01L 21/0228 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/2225 (2013.01); H01L 21/2255 (2013.01); H01L 21/324 (2013.01); H01L 29/66803 (2013.01);
Abstract
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.