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For the Inventor, By the Inventor

Helsinki, Finland

Antti Niskanen

This inventor holds 68 USPTO granted patents and 11 published patent applications and 2 EPO patents, primarily in Thin Film Deposition (CPC class H01L). Top assignees: Asm IP Holding B.v., Asm International N.v., Asm IP Holdings B.v.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antti Niskanen. Retrieved from https://idiyas.com/inventor/antti-niskanen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 68 

% Patents Active = 98.5

 

Average Co-Inventor Count = 3.9

ph-index = 29

Forward Citations = 7,687(Granted Patents)

Forward Citations (Not Self Cited) = 7,045(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Helsinki, FI (2005 - 2024)
  • Uusimaa, FI (2024)

Company Filing History:

goldMedal47 out of 1,318 
 
Asm IP Holding B.v.
 patents
silverMedal20 out of 313 
 
Asm International N.v.
 patents
bronzeMedal1 out of 36 
 
Asm IP Holdings B.v.
 patents

Years Active: 2005-2026

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Areas of Expertise:
Thin Film Deposition
Silicon Nitride
Metal Oxides
Atomic Layer Deposition
Hydrophobic Precursors
Doped Silicon Oxide
Gas-phase Chemical Reactor
Selective Deposition
Reaction Chamber Passivation
Precursor Materials
Transition Metal Deposition
Indium Nitride
68 patents (USPTO):Explore Patents
1. 12738458 - Processing chamber, assembly and a method (2026-09-15),
2. 12685045 - Deposition of oxide thin films (2026-07-14),
3. 12630924 - Transition metal deposition method (2026-05-19),
4. 12516413 - Gas-phase chemical reactor and method of using same (2026-01-06),
5. 12410516 - Container for efficient vaporization of precursor materials and method of using the same (2025-09-09),
6. 12154785 - Deposition of oxide thin films (2024-11-26),
7. 12080548 - Selective deposition using hydrophobic precursors (2024-09-03),
8. 12024772 - Apparatuses for thin film deposition (2024-07-02),
9. 11975357 - Selective deposition of metals, metal oxides, and dielectrics (2024-05-07),
10. 11885020 - Transition metal deposition method (2024-01-30),
11. 11649546 - Organic reactants for atomic layer deposition (2023-05-16),
12. 11646194 - Methods for forming silicon nitride thin films (2023-05-09),
13. 11587783 - Si precursors for deposition of SiN at low temperatures (2023-02-21),
14. 11525184 - Dual selective deposition (2022-12-13),
15. 11430656 - Deposition of oxide thin films (2022-08-30),

Title: Antti Niskanen - Pioneering Inventor from Helsinki, Finland

Introduction: Antti Niskanen is a renowned inventor hailing from the vibrant city of Helsinki, Finland. With a passion for innovation and a keen eye for detail, he has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Antti Niskanen holds several patents in the areas of renewable energy, sustainable transportation, and smart home technologies. His most recent patents focus on enhancing energy efficiency in urban environments and promoting eco-friendly solutions for everyday living.

Career Highlights: Throughout his illustrious career, Antti Niskanen has worked with leading tech companies and research institutions to bring his inventions to life. His dedication to creating sustainable solutions has earned him recognition as a thought leader in the industry.

Collaborations: Antti Niskanen has collaborated with top engineers, designers, and scientists to develop cutting-edge technologies that have the potential to shape the future of our society. His collaborative spirit and innovative mindset have led to the successful implementation of various projects.

Conclusion: In conclusion, Antti Niskanen's innovative spirit and commitment to sustainability have positioned him as a trailblazer in the world of technology. His contributions continue to inspire the next generation of inventors and pave the way for a more sustainable future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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