Asm IP Holding B.v.

Asm International N.v.

Asm IP Holdings B.v.

Eto Magnetic Gmbh

Antti Niskanen

Suvi P Haukka

Viljami J Pore

Eva E Tois

Marko J Tuominen

Shang Chen

Atsuki Fukazawa

Raija H Matero

Hideaki Fukuda

Kunitoshi Namba

Noboru Takamure

Ryu Nakano

Hannu Huotari

Hidemi Suemori

Jaakko Anttila

Jan Willem Maes

Elina Färm

Ivo Johannes Raaijmakers

Qi Xie

Dai Ishikawa

Delphine Longrie

Petri Räisänen

Ryoko Yamada

Han Wang

Takahiro Onuma

Toshiharu Watarai

Yukihiro Mori

Jun Kawahara

Mikko Ritala

Markku Leskelä

Sung-Hoon Jung

Matti Putkonen

Jaako Anttila

Charles Dezelah

Naoto Tsuji

Hyung Sang Park

Aleksandr Soroka

Jaakko Niinistö

Jaakko Niinistō

Saima Ali

Oleksii Sozinov

Kari Korpiola

Jukka Perento

A precursor vessel for a vapor deposition process is disclosed. The vessel includes a housing having an inlet, an outlet, and defining an interior volume. A tube is disposed within the interior volume and extends from the inlet to the outlet. The tube has sidewalls defining a flowpath there through. The sidewalls have an internal surface facing the flowpath having a plurality of depressions in the internal surface having a depth and a width. A solid precursor material may be loaded into the depressions. A system including the precursor vessel and a vapor deposition process are further disclosed herein.

Container for efficient vaporization of precursor materials and method of using the same

Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

Deposition of oxide thin films

Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrOor HfO. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

Selective deposition using hydrophobic precursors

In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Apparatuses for thin film deposition

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Selective deposition of metals, metal oxides, and dielectrics

Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Transition metal deposition method

A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

Organic reactants for atomic layer deposition

The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane SiXsilicon precursor, such as octachlorotrisilane (OCTS) SiCl, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

Methods for forming silicon nitride thin films

Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

Si precursors for deposition of SiN at low temperatures

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Dual selective deposition

Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

Deposition of SiN

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Methods for forming doped silicon oxide thin films

A gas-phase chemical reactor, a system including the reactor, and methods of using the reactor and system are disclosed. An exemplary reactor includes a reaction chamber and is configured to provide a precursor within the reaction chamber for a soak period&#x2014;e.g., a period wherein a supply of the precursor to the reaction chamber is ceased and before purging of the reaction chamber begins. This allows relatively high residence times, relatively high partial pressures of the precursor(s) and/or a relatively high absolute pressure to be obtained within the reaction chamber during substrate processing.

Gas-phase chemical reactor and method of using same

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Helsinki, Finland

Antti Niskanen