The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Nov. 23, 2020
Asm Ip Holding B.v., Almere, NL;
Antti J. Niskanen, Helsinki, FI;
Shang Chen, Tokyo, JP;
Viljami Pore, Helsinki, FI;
Atsuki Fukazawa, Tokyo, JP;
Hideaki Fukuda, Tokyo, JP;
Suvi P. Haukka, Helsinki, FI;
ASM IP HOLDING B.V., Almere, NL;
Abstract
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).