Shang Chen

Title: Innovations by Shang Chen: A Spotlight on Patents and Collaborations

Introduction: Shang Chen, an accomplished inventor based in Tokyo, Japan, is recognized for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 22 patents, his work focuses on the formation and deposition of silicon nitride thin films, showcasing his dedication to advancing materials science and engineering.

Latest Patents: Shang Chen's latest patents demonstrate a deep understanding of materials deposition processes. One notable patent involves the "Formation of SiN thin films," which provides methods for creating silicon nitride thin films under high pressure. This method includes multiple plasma enhanced atomic layer deposition (PEALD) cycles, where the substrate is exposed to nitrogen plasma, achieving optimal process pressure between 20 Torr to 500 Torr. The use of silicon precursors like silyl halides enhances the film properties, particularly on three-dimensional structures.

Another significant patent addresses "Si precursors for deposition of SiN at low temperatures." This innovative approach provides methods and precursors for atomic layer deposition (ALD) of silicon nitride films. The incorporation of iodine ligands in the silicon precursors leads to uniform etch rates, beneficial for three-dimensional semiconductor devices such as FinFETS. The developed silicon nitride films exhibit an impressive etch rate that is less than half of the thermal oxide removal rate when treated with diluted HF.

Career Highlights: Shang Chen's career is marked by his affiliation with Asm IP Holding B.V., a leader in the semiconductor industry. His inventive spirit has propelled numerous research initiatives, positioning him as a recognized figure in patent filings and technological advancements.

Collaborations: Throughout his career, Shang Chen has collaborated with notable colleagues, including Antti Niskanen and Viljami J Pore. These partnerships have fostered a collaborative environment that encourages the sharing of ideas and expertise, resulting in groundbreaking advancements in their respective fields.

Conclusion: Shang Chen's innovative spirit and substantial patent portfolio underscore his valuable contributions to semiconductor technology. His work not only enhances the properties of silicon nitride films but also paves the way for future developments in three-dimensional semiconductor devices. As he continues to push the boundaries of research, his legacy is firmly established within the realm of materials science and engineering.