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For the Inventor, By the Inventor

Tokyo, Japan

Ryu Nakano

This inventor holds 32 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Processing. Top assignees: Asm IP Holding B.v., Asm International N.v., Asm Japan K.k.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryu Nakano. Retrieved from https://idiyas.com/inventor/ryu-nakano

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 15

Forward Citations = 7,122(Granted Patents)


Location History:

  • Tama, JP (2006 - 2011)
  • Sagamahira, JP (2014)
  • Boise, ID (US) (2018)
  • Tokyo, JP (2014 - 2022)
  • Sagamihara, JP (2012 - 2024)
  • Kanagawa, JP (2024)

Company Filing History:

goldMedal17 out of 1,312 
 
Asm IP Holding B.v.
 patents
silverMedal9 out of 313 
 
Asm International N.v.
 patents
bronzeMedal5 out of 194 
 
Asm Japan K.k.
 patents
4. 1 out of 36 
 
Asm IP Holdings B.v.
 patents

Years Active: 2006-2026

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Areas of Expertise:
Substrate Processing
Cyclical Deposition
Silicon Oxide Film
Plasma-Assisted Processing
Doped Silicon Oxide
Reactor System
Film Forming Apparatus
Barrier Layer
Multilayer Resist Structure
Thin Films
Hydrocarbon-Based Film
Oxide Film
32 patents (USPTO):Explore Patents
1. 12745611 - Substrate processing method and apparatus (2026-09-22),
2. 12590364 - Cyclical deposition methods (2026-03-31),
3. 12442082 - Reactor system comprising a tuning circuit (2025-10-14),
4. 12394626 - Method of forming a structure and system for same (2025-08-19),
5. 12074022 - Method and system for forming patterned structures using multiple patterning process (2024-08-27),
6. 12033849 - Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane (2024-07-09),
7. 11970769 - Cyclical deposition methods (2024-04-30),
8. 11830738 - Method for forming barrier layer and method for manufacturing semiconductor device (2023-11-28),
9. 11527400 - Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane (2022-12-13),
10. 11482418 - Substrate processing method and apparatus (2022-10-25),
11. 11302527 - Methods for forming doped silicon oxide thin films (2022-04-12),
12. 10784105 - Methods for forming doped silicon oxide thin films (2020-09-22),
13. 10510530 - Methods for forming doped silicon oxide thin films (2019-12-17),
14. 10147600 - Methods for forming doped silicon oxide thin films (2018-12-04),
15. 10043661 - Method for protecting layer by forming hydrocarbon-based extremely thin film (2018-08-07),

Title: The Innovative Journey of Inventor Ryu Nakano

Introduction: Ryu Nakano, a pioneering inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology and innovation through his groundbreaking creations.

Latest Patents: Nakano's latest patents include a cutting-edge virtual reality headset that has revolutionized the gaming industry, as well as a patented drone technology that is being used for various applications in agriculture and surveillance.

Career Highlights: With a career spanning over two decades, Nakano has established himself as a leading figure in the field of robotics and artificial intelligence. His work has not only garnered international acclaim but has also paved the way for future advancements in the industry.

Collaborations: Throughout his career, Nakano has collaborated with top research institutions and tech companies to bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation and creating solutions to complex technological challenges.

Conclusion: In conclusion, Ryu Nakano's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his position as a visionary inventor. His work continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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