The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Aug. 24, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/042 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/52 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/0228 (2013.01); H01L 21/0337 (2013.01); H01J 2237/332 (2013.01); H01L 21/02142 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02172 (2013.01);
Abstract
Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.