Asm IP Holding B.v.

Asm International N.v.

Asm Japan K.k.

Asm IP Holdings B.v.

Ryu Nakano

Kunitoshi Namba

Noboru Takamure

Suvi P Haukka

Atsuki Fukazawa

Antti Niskanen

Hideaki Fukuda

Naoki Inoue

Yuko Kengoyama

Toshihisa Nozawa

David Kurt De Roest

Naoto Tsuji

Hidemi Suemori

Akinori Nakano

Wataru Adachi

Takashi Yoshida

Yozo Ikedo

Fumitaka Shoji

Zecheng Liu

Tsutomu Makino

Yoann Francis Tomczak

Hiroki Arai

Ivan Zyulkov

Hisashi Takamizawa

Yiting Sun

Yu Yoshizaki

Richika Kato

Mao Tsuchiya

Shinya Yamada

Yoshihiro Isii

Toru Sugiyama

Shuzo Hebiguchi

Trigagema Gama

A susceptor assembly for a reactor system may comprise a susceptor body defined by a susceptor outer edge, the susceptor body comprising a susceptor outer portion and a susceptor inner portion, wherein the susceptor outer portion is proximate the susceptor outer edge, and the susceptor inner portion is at least partially enclosed within the susceptor outer portion; a first tuning circuit comprising an edge electrode and a first resonance circuit coupled to the edge electrode, wherein the edge electrode is coupled to the susceptor body; a second tuning circuit comprising a center electrode and a second resonance circuit coupled to the center electrode, wherein the center electrode is coupled to the susceptor body; wherein the edge electrode is disposed more proximate the susceptor outer edge than the center electrode.

Reactor system comprising a tuning circuit

Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal-containing layer comprises oxygen and a metal.

Method of forming a structure and system for same

Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a layer overlying the substrate by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency.

Method and system for forming patterned structures using multiple patterning process

In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane

Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

Cyclical deposition methods

In a method for forming a barrier layer, the barrier layer is formed on a base layer having a three-dimensional structure before a dopant-containing layer is formed on the base layer. At this time, at least one of a film thickness, a film quality, and a film type of the barrier layer is controlled in a height direction of the three-dimensional structure by using an atomic layer deposition (ALD) process.

Method for forming barrier layer and method for manufacturing semiconductor device

In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400&#xb0; C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane

Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Substrate processing method and apparatus

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Methods for forming doped silicon oxide thin films

A method for protecting a layer includes: providing a substrate having a target layer; depositing a protective layer on the target layer, which protective layer contacts and covers the target layer and is constituted by a hydrocarbon-based layer; and depositing an oxide layer on the protective layer so that the protective layer in contact with the oxide layer is oxidized. The hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Method for protecting layer by forming hydrocarbon-based extremely thin film

A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber.

Film forming apparatus, and method of manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Ryu Nakano