The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Jul. 14, 2017
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Viljami Pore, Helsinki, FI;

Werner Knaepen, Leuven, BE;

Bert Jongbloed, Oud-Heverlee, BE;

Dieter Pierreux, Dilbeek, BE;

Steven R. A. Van Aerde, Tielt-Winge, BE;

Suvi Haukka, Helsinki, FI;

Atsuki Fukazawa, Tama, JP;

Hideaki Fukuda, Hachioji, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); H01L 21/762 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/045 (2013.01); C23C 16/402 (2013.01); C23C 16/45534 (2013.01); C23C 16/45542 (2013.01); H01J 37/32009 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02183 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02299 (2013.01); H01L 21/76224 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01);
Abstract

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.


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