Asm IP Holding B.v.

Asm Japan K.k.

Hitachi, Ltd.

Asm International N.v.

Meidensha Corporation

Asm America, Inc.

Hitachi Vantara Corporation

Asm Jpapan K.k.

Hideaki Fukuda

Atsuki Fukazawa

Suvi P Haukka

Antti Niskanen

Kunitoshi Namba

Noboru Takamure

Viljami J Pore

Ryu Nakano

Shang Chen

Hiroki Arai

Akira Shimizu

Shuji Nakamura

Dieter Pierreux

Bert Jongbloed

Werner Knaepen

Masaru Zaitsu

Naoki Moritoki

Akira Fujibayashi

Yukihiro Mori

Masahiro Arai

Katsuya Tanaka

Masanori Takada

Mutsumi Hosoya

Keita Ishikawa

Nobuyuki Minowa

Shota Hayashi

Steven R A Van Aerde

Kosuke Hasegawa

Kenta Yamamura

Baiei Kawano

Yutaro Kobayashi

Hiroshi Hirayama

Satoshi Koizumi

Akira Sano

Charles Dezelah

Takayuki Yamagishi

Naoto Tsuji

Koji Akiyama

Shoji Kato

Yoshinori Morisada

Hessel Sprey

Kiyohiro Matsushita

Timothee Blanquart

Yosuke Kimura

Wataru Adachi

Takahiro Onuma

Masaki Yoshimaru

Masatomo Ohno

Susumu Tsuruta

Osamu Torigoe

Maarten Stokhof

Woo-Jin Lee

Kenichi Kagami

Hirofumi Arai

Jeongseok Ha

Fumitaka Shoji

Kyohei Ide

Shinya Yoshimoto

Makoto Igarashi

Tamihiro Kobayashi

Masaki Tokunaga

Masato Shimizu

Yasuhiro Igarashi

Kazuo Sato

Shigeyuki Onizawa

Hiroshi Kanayama

Hiroki Kanayama

Kazunori Furukawahara

Yu Yoshizaki

Devendra Kumar

Kamal Kishore Goundar

Nathanael R C Kemeling

Atsuki Fukuzawa

Baiei Kono

Yoshikazu Murayama

Rene Henricus Jozef Vervuurt

Noboru Sakurai

Hiroki Narita

Hiroshi Shimmura

Shintaro Kaido

Emi Nakamura, Legal Representative

Sho Takizawa

Masamoto Ohno

An arc shield with which a tubular body of a vacuum container is provided includes a tubular arc-shield body portion interposed between a fixed-side insulating portion and a movable-side insulating portion; a tubular arc shield fixed-side extension portion extending from the arc-shield body portion on the axially fixed side along the inner peripheral side of the fixed-side insulating portion; and a tubular arc shield movable-side extension portion extending from the arc-shield body portion on the axially movable side along the inner peripheral side of the movable-side insulating portion. Further, at least one of the arc shield fixed-side extension portion and the arc shield movable-side extension portion is shaped such that the portion becomes smaller in diameter in a stepped manner in the direction of extension thereof.

Vacuum interrupter

A storage apparatus includes a plurality of storage controllers. Each of the plurality of storage controllers includes a controller interface for connecting the storage controllers. The controller interface includes one or more logical ports corresponding to each storage controller of the connection destination. When converting the first request of the first protocol used in the storage controller into the second request of the second protocol used in the inter-storage controller network, the controller interface stores the identification information of the first request and the identification information of the second request in the send queue of the logical port.

Storage device and protocol conversion method by storage device

In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

Methods and apparatuses for flowable gap-fill

Each storage controller comprises a first storage unit, an interface unit, and a processing unit which sends, to the interface unit, a parameter which instructs n-fold write of writing data in each of n-number of (n is a natural number of 2 or more) other storage controllers. When the interface unit receives the parameter, the interface unit executes each processing of acquiring the data from the first storage unit and storing the data in the second storage unit, generating n-number of requests of writing the data in each of n-number of the other storage controllers, storing each of the generated requests in n-number of the queues corresponding to each of n-number of the other storage controllers, and processing each request stored in each queue and transferring the data stored in the second storage unit to each of n-number of the other storage controllers.

Storage system, data write control method, and non-transitory computer readable medium for storing data write control program

The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiHX, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

Silicon precursors for silicon nitride deposition

An arc shield surrounding an outer peripheral side of a fixed electrode and a movable electrode is provided, in addition to a fixed-side insulating unit in which a fixed-side insulator is provided to be connected coaxially with the arc shield on the fixed side in the axial direction of the arc shield, and a movable-side insulating unit in which movable-side insulators are provided to be connected coaxially with the arc shield on the movable side in the axial direction of the arc shield. The movable-side insulating unit has an insulator group in which movable-side insulators are provided to be connected in the axial direction, an insulator-group-side sub shield surrounding the outer peripheral side of a movable-side energizing shaft, and an insulator-group-side sub shield support part which is on the outer peripheral surface of the insulator-group-side sub shield and interposed between two adjacent movable-side insulators of the insulator group.

Vacuum interrupter and vacuum breaker

According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

Method and apparatus for filling a gap

Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

Si precursors for deposition of SiN at low temperatures

An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, &#x2014;NR, or &#x2014;OR.

Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Methods for forming doped silicon oxide thin films

A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [&#x3bc;m]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer:(&#x2212;0.5+40)&#x2264;&#x2264;53;5&#x2264;&#x2264;100.

Wafer-supporting device and method for producing same

There is disclosed a method for manufacturing an electrode by pressing and sintering a mixed powder of a solid solution powder of Cr and a heat-resistant element, which contains Cr and the heat-resistant element in a ratio such that Cr is greater than the heat-resistant element by weight, a Cu powder, and a low melting metal powder (Bi, Sn, Se, Pb, etc.). The low melting metal powder of 0.30 weight % to 0.50 weight % is added to a mixed powder of a solid solution powder of Cr and the heat-resistant element and the Cu powder, and then a mixed powder prepared by adding the low melting metal powder is sintered at a temperature of from 1010&#xb0; C. to 1035&#xb0; C. As the low melting metal powder, there is used a powder having a median size of from 5 &#x3bc;m to 20 &#x3bc;m.

Method for manufacturing electrode material

This computer system is configured by connecting a plurality of computers via a communication network. At least one computer among the computers has a storage device and a communication device. The communication device has: a controller that controls data transmission/reception via the communication network; and an intermediate memory that stores data transmitted/received between the storage device and other calculators on the communication network.

Computer system, communication device, and storage control method with DMA transfer of data

Growing community of inventors

Tokyo, Japan

Hideaki Fukuda