Yoshinori Morisada

This inventor holds 17 USPTO granted patents, primarily in Plasma CVD Technology. Top assignees: Asm Japan K.k., Samsung Electronics Co., Ltd.. Active years: 2002-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshinori Morisada. Retrieved from https://idiyas.com/inventor/yoshinori-morisada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 11

Forward Citations = 1,970(Granted Patents)

Location History:

Tami, JP (2005)
Tama, JP (2002 - 2010)

Company Filing History:

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2002-2010

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Areas of Expertise:

Plasma CVD

Carbon Polymer Film

Insulation Film

Semiconductor Substrate

Siloxan Polymer

Silicone Polymer

Low-k Hard Film

Dual-Chamber Apparatus

Film-Forming Device

Low Dielectric Constant

Film Formation Method

Processing Apparatus

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7799134 - Shower plate having projections and plasma CVD apparatus using same (2010-09-21),

2. 7638441 - Method of forming a carbon polymer film using plasma CVD (2009-12-29),

3. 7504344 - Method of forming a carbon polymer film using plasma CVD (2009-03-17),

4. 7470633 - Method of forming a carbon polymer film using plasma CVD (2008-12-30),

5. 7410915 - Method of forming carbon polymer film using plasma CVD (2008-08-12),

6. 7381291 - Dual-chamber plasma processing apparatus (2008-06-03),

7. 7064088 - Method for forming low-k hard film (2006-06-20),

8. 6881683 - Insulation film on semiconductor substrate and method for forming same (2005-04-19),

9. 6852650 - Insulation film on semiconductor substrate and method for forming same (2005-02-08),

10. 6784123 - Insulation film on semiconductor substrate and method for forming same (2004-08-31),

11. 6759344 - Method for forming low dielectric constant interlayer insulation film (2004-07-06),

12. 6740367 - Plasma CVD film-forming device (2004-05-25),

13. 6631692 - Plasma CVD film-forming device (2003-10-14),

14. 6559520 - Siloxan polymer film on semiconductor substrate (2003-05-06),

15. 6514880 - Siloxan polymer film on semiconductor substrate and method for forming same (2003-02-04),

Title: Innovations of Yoshinori Morisada

Introduction

Yoshinori Morisada is a prominent inventor based in Tama, Japan. He has made significant contributions to the field of plasma CVD technology, holding a total of 17 patents. His work focuses on enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Morisada's latest patents include a shower plate having projections and a plasma CVD apparatus using the same. This innovative shower plate features protrusions formed on the front face, which are utilized with a first electrode in a plasma CVD apparatus. The design leaves a plane-surface portion around the apertures of gas inlet holes, increasing the surface area of the first electrode. Another notable patent is a method of forming a carbon polymer film using plasma CVD. This method involves vaporizing a hydrocarbon-containing liquid monomer and introducing the vaporized gas into a CVD reaction chamber, where a hydrocarbon-containing polymer film is formed on a semiconductor substrate through plasma polymerization.

Career Highlights

Throughout his career, Yoshinori Morisada has worked with notable companies such as Asm Japan K.K. and Samsung Electronics Co., Ltd. His expertise in plasma CVD technology has made him a valuable asset in the semiconductor industry.

Collaborations

Morisada has collaborated with esteemed colleagues, including Nobuo Matsuki and Seijiro Umemoto. These partnerships have contributed to the advancement of innovative technologies in the field.

Conclusion

Yoshinori Morisada's contributions to plasma CVD technology and his impressive portfolio of patents highlight his role as a leading inventor in the semiconductor industry. His work continues to influence advancements in manufacturing processes.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]