The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Apr. 11, 2003
Yasuyoshi Hyodo, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Yoshinori Morisada, Tama, JP;
Masashi Yamaguchi, Tama, JP;
Nobuo Matsuki, Tama, JP;
Yasuyoshi Hyodo, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Yoshinori Morisada, Tama, JP;
Masashi Yamaguchi, Tama, JP;
Nobuo Matsuki, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.