The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Nov. 05, 2002
Nobuo Matsuki, Tama, JP;
Yasuyoshi Hyodo, Tama, JP;
Masashi Yamaguchi, Tama, JP;
Yoshinori Morisada, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Manabu Kato, Tama, JP;
Nobuo Matsuki, Tama, JP;
Yasuyoshi Hyodo, Tama, JP;
Masashi Yamaguchi, Tama, JP;
Yoshinori Morisada, Tama, JP;
Atsuki Fukazawa, Tama, JP;
Manabu Kato, Tama, JP;
ASM Japan K.K., Tokyo, JP;
Abstract
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.