The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Apr. 06, 2001
Nobuo Matsuki, Tama, JP;
Lee Jea Sik, Tama, JP;
Yoshinori Morisada, Tama, JP;
Satoshi Takahashi, Tama, JP;
ASM Japan K.K., Tama, JP;
Abstract
A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si O R (OC H ) wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.