Asm Japan K.k.

Samsung Electronics Co., Ltd.

Yoshinori Morisada

Nobuo Matsuki

Atsuki Fukazawa

Yasuyoshi Hyodo

Masashi Yamaguchi

Seijiro Umemoto

Manabu Kato

Satoshi Takahashi

Kamal Kishore Goundar

Lee Jea Sik

Yuichi Naito

Aya Matsunoshita

Jea Sik Lee

Hideaki Fukuda

Naoto Tsuji

Shingo Ikeda

Hiroki Arai

Baiei Kawano

Devendra Kumar

Tamihiro Kobayashi

Eun Kyung Baek

Yasuhiro Tobe

Shinya Kaneko

Kyu Tae Na

A shower platehas protrusionsformed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portionis left around apertures of gas inlet holesformed in the shower plate. With protrusionsbeing formed, a surface area of the first electrode is increased.

Shower plate having projections and plasma CVD apparatus using same

A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.

Method of forming a carbon polymer film using plasma CVD

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CHX, wherein &#x3b1; and &#x3b2; are natural numbers of 5 or more; &#x3b3; is an integer including zero; X is O, N or F) having a boiling point of about 20&#xb0; C. to about 350&#xb0; C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and COgas or Hgas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

Method of forming carbon polymer film using plasma CVD

A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.

Dual-chamber plasma processing apparatus

A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Method for forming low-k hard film

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Insulation film on semiconductor substrate and method for forming same

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of &minus;50&deg; C.-100&deg; C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.

An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.

Method for forming low dielectric constant interlayer insulation film

A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.

Plasma CVD film-forming device

A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has &mdash;SiR O&mdash; repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si O R (OC H ) wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

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Tama, Japan

Yoshinori Morisada