The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

Mar. 05, 2010
Applicants:

Julian J. Hsieh, Zhubei, TW;

Nobuyoshi Kobayashi, Kawagoe, JP;

Akira Shimizu, Sagamihara, JP;

Kiyohiro Matsushita, Fuchu, JP;

Atsuki Fukazawa, Tama, JP;

Inventors:

Julian J. Hsieh, Zhubei, TW;

Nobuyoshi Kobayashi, Kawagoe, JP;

Akira Shimizu, Sagamihara, JP;

Kiyohiro Matsushita, Fuchu, JP;

Atsuki Fukazawa, Tama, JP;

Assignee:

ASM Japan K.K., Tama-shi, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.

Published as:

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