The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

May. 18, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Akiko Kobayashi, Inagi, JP;

René Henricus Jozef Vervuurt, Leuven, BE;

Nobuyoshi Kobayashi, Kawagoe, JP;

Takayoshi Tsutsumi, Nagoya, JP;

Masaru Hori, Nissin, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/402 (2013.01); C23C 16/4554 (2013.01); C23C 16/45553 (2013.01); C23C 16/4583 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01J 37/32082 (2013.01); H01J 37/3244 (2013.01); H01J 37/32816 (2013.01); H01J 2237/2001 (2013.01);
Abstract

Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.


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