EPO Patents = 1

Average Co-Inventor Count = 3.7

ph-index = 23

Forward Citations = 1,734(Granted Patents)

Forward Citations (Not Self Cited) = 1,711(Oct 12, 2025)

Inventors with similar research interests:

Location History:

Bisai-shi, Aichi-ken, JP (1998)
Bisai, JP (2000 - 2006)
Nishikasugai-gun, JP (2003 - 2007)
Nakashima-gun, JP (1999 - 2008)
Aichi-ken, JP (1997 - 2011)
Aichi, JP (2000 - 2014)
Kiyosu, JP (2015 - 2017)

Company Filing History:

70 out of 3,077

Toyoda Gosei Co., Ltd.

patents

1 out of 255

Research Development Corporation of Japan

patents

1 out of 4,676

Mazda Motor Corporation

7. 2 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 1997-2017

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72 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9837494 - Production method for group III nitride semiconductor and group III nitride semiconductor (2017-12-05),

2. 9214339 - Method for producing group III nitride semiconductor (2015-12-15),

3. 9209021 - Method for producing Group III nitride semiconductor and Group III nitride semiconductor (2015-12-08),

4. 9190268 - Method for producing Ga-containing group III nitride semiconductor (2015-11-17),

5. 8651552 - Support structure of windshield (2014-02-18),

6. 8084281 - Semiconductor substrate, electronic device, optical device, and production methods therefor (2011-12-27),

7. 7981744 - Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth (2011-07-19),

8. 7872274 - n-Electrode for III group nitride based compound semiconductor element (2011-01-18),

9. 7867800 - Light-emitting semiconductor device using group III nitrogen compound (2011-01-11),

10. 7564062 - Electrode for p-type SiC (2009-07-21),

11. 7550782 - Semiconductor device having an undercoat layer and method of manufacturing the same (2009-06-23),

12. 7524741 - Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device (2009-04-28),

13. 7332366 - Light-emitting semiconductor device using group III nitrogen compound (2008-02-19),

14. 7312472 - Compound semiconductor element based on Group III element nitride (2007-12-25),

15. 7247884 - Group III nitride compound semiconductor light-emitting element (2007-07-24),

Title: The Innovative Journey of Naoki Shibata

Introduction: Naoki Shibata, a pioneering inventor hailing from Aichi, Japan, has made significant contributions to the world of technology through his groundbreaking innovations and patents.

Latest Patents: Naoki Shibata's latest patents focus on advancements in robotics and artificial intelligence, showcasing his dedication to pushing the boundaries of technological possibilities.

Career Highlights: With a career spanning over two decades, Naoki Shibata has established himself as a leading figure in the field of robotics, with a particular emphasis on human-robot interactions and autonomous systems. His work has not only garnered international recognition but has also paved the way for future innovations in the industry.

Collaborations: Throughout his career, Naoki Shibata has collaborated with top research institutions and tech companies to further his research and bring his inventions to life. His ability to work across disciplines and with diverse teams has been instrumental in the success of his projects.

Conclusion: Naoki Shibata's relentless pursuit of innovation and his passion for creating technology that enhances the way we live and work make him a true visionary in the world of inventions. His impact on the field of robotics is undeniable, and his legacy will continue to inspire future generations of inventors and innovators.

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1 patent (EPO):

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