The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Sep. 02, 2002
Shunsuke Murai, Tokyo, JP;
Masanori Murakami, Kyotanabe, JP;
Yasuo Koide, Tsukuba, JP;
Naoki Shibata, Aichi, JP;
Shunsuke Murai, Tokyo, JP;
Masanori Murakami, Kyotanabe, JP;
Yasuo Koide, Tsukuba, JP;
Naoki Shibata, Aichi, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi, JP;
Abstract
An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd), platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).