The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 09, 2005
Masayoshi Kosaki, Aichi, JP;
Koji Hirata, Aichi, JP;
Masanobu Senda, Aichi, JP;
Naoki Shibata, Aichi, JP;
Masayoshi Kosaki, Aichi, JP;
Koji Hirata, Aichi, JP;
Masanobu Senda, Aichi, JP;
Naoki Shibata, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.