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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9209021 B1

PDFFull Text
Date of Patent:
Dec. 08, 2015

Filed:

May. 29, 2014

Method for producing group iii nitride semiconductor and group iii nitride semiconductor

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu, JP;

Inventors:

Koji Okuno, Kiyosu, JP;

Takahide Oshio, Kiyosu, JP;

Naoki Shibata, Kiyosu, JP;

Hiroshi Amano, Nagoya, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:

McGinn IP Law Group, PLLC.

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02609 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01);
Abstract

A first side surface of post of the first stripe is formed so that a plane which is most parallel to the first side surface among low-index planes of the growing Group III nitride semiconductor is a m-plane (10-10), and a first angle between the first lateral vector obtained by orthogonally projecting a normal vector of the first side surfaces to the main surface and a m-axis projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing semiconductor to the main surface is from 0.5° to 6°. A second side surface of post of the second stripe is formed so that a plane which is most parallel to the second side surface among low-index planes of the growing semiconductor is an a-plane (11-20), and a second angle between the second lateral vector and an a-axis projected vector of the a-plane is from 0° to 10°.

Find Patent Forward Citations

Okuno, Koji. (2015). Method for producing group iii nitride semiconductor and group iii nitride semiconductor (U.S. Patent No. 9209021). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9209021

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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