The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Sep. 23, 2005
Masanori Murakami, Kyoto, JP;
Teppei Watanabe, Kyoto, JP;
Susumu Tsukimoto, Kyoto, JP;
Kazuhiro Ito, Kyoto, JP;
Jun Ito, Aichi, JP;
Miki Moriyama, Aichi, JP;
Naoki Shibata, Aichi, JP;
Masanori Murakami, Kyoto, JP;
Teppei Watanabe, Kyoto, JP;
Susumu Tsukimoto, Kyoto, JP;
Kazuhiro Ito, Kyoto, JP;
Jun Ito, Aichi, JP;
Miki Moriyama, Aichi, JP;
Naoki Shibata, Aichi, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi, JP;
Abstract
In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.