Kyoto, Japan

Susumu Tsukimoto

USPTO Granted Patents = 4 

Average Co-Inventor Count = 7.5

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2009-2010

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4 patents (USPTO):Explore Patents

Title: Susumu Tsukimoto: Innovator in Semiconductor Technology

Introduction

Susumu Tsukimoto is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His innovative approaches have paved the way for advancements in electronic components and materials.

Latest Patents

One of Tsukimoto's latest patents is a method of fabricating semiconductor interconnections. This method allows for the formation of a titanium-rich layer as a barrier and enables the embedding of pure copper material into narrow and deep grooves in an insulating film. The process includes forming grooves with a minimum width of 0.15 μm or less, applying a copper alloy thin film, and subsequently forming a pure copper thin film, followed by annealing at high temperatures. Another notable patent involves a light-emitting element made from a group III nitride-based compound semiconductor. This element is produced by lifting off a substrate through wet etching, ensuring that the lift-off surface remains intact during the growth process.

Career Highlights

Throughout his career, Tsukimoto has worked with notable companies such as Toyoda Gosei Co., Ltd. and Kobe Steel, Ltd. His experience in these organizations has contributed to his expertise in semiconductor technologies and materials.

Collaborations

Tsukimoto has collaborated with esteemed colleagues, including Masanori Murakami and Kazuhiro Ito. These partnerships have fostered innovation and development in their respective fields.

Conclusion

Susumu Tsukimoto's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic components and materials.

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