The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Mar. 15, 2007
Naoki Shibata, Aichi, JP;
Koji Hirata, Aichi, JP;
Shiro Yamazaki, Aichi, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Naoki Shibata, Aichi, JP;
Koji Hirata, Aichi, JP;
Shiro Yamazaki, Aichi, JP;
Katsuhiro Imai, Nagoya, JP;
Makoto Iwai, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, Aichi-Ken, JP;
NGK Insulators, Ltd., Nagoya-Shi, Aichi, JP;
Osaka University, Suita-Shi, Osaka, JP;
Abstract
The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.