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Katsuhiro Imai

USPTO Granted Patents = 56 (Patent Applications = 1)

EPO Patents = 6

Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 84(Granted Patents)

Forward Citations (Not Self Cited) = 77(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Aichi-ken, JP (2012)
Aichi-Pref., JP (2013)
Nagoya, JP (1997 - 2024)

Company Filing History:

54 out of 4,920

Ngk Insulators, Inc.

Toyoda Gosei Co., Ltd.

Osaka University

4. 3 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 1997-2024

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Areas of Expertise:

Nitride Semiconductor

Gallium Nitride

Zinc Oxide

Light-Emitting Elements

Composite Substrates

Single Crystal Growth

Photovoltaic Elements

Polycrystalline Materials

Heat Discharge Structures

Semiconductor Substrates

N-Type Compounds

Crystal Growing Apparatus

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11862689 - Group-III element nitride semiconductor substrate (2024-01-02),

2. 11035055 - Group 13 nitride layer, composite substrate, and functional element (2021-06-15),

3. 10947638 - Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis (2021-03-16),

4. 10804432 - Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same (2020-10-13),

5. 10734548 - Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same (2020-08-04),

6. 10707373 - Polycrystalline gallium nitride self-supported substrate and light emitting element using same (2020-07-07),

7. 10598369 - Heat discharge structures for light source devices and light source systems (2020-03-24),

8. 10332958 - Supporting substrate for composite substrate and composite substrate (2019-06-25),

9. 10249494 - Free-standing substrate, function element and method for producing same (2019-04-02),

10. 10156022 - Method for producing nitride of group-13 element, and melt composition (2018-12-18),

11. 10138570 - System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables (2018-11-27),

12. 10041186 - Method for producing nitride crystal (2018-08-07),

13. 9960316 - Method for separating group 13 element nitride layer, and composite substrate (2018-05-01),

14. 9919931 - Zinc oxide sputtering target (2018-03-20),

15. 9893234 - Composite substrate for light-emitting element and production method therefor (2018-02-13),

Title: Katsuhiro Imai: Pioneering Inventor from Nagoya

Introduction: Katsuhiro Imai is a renowned inventor hailing from Nagoya, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Katsuhiro Imai holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Katsuhiro Imai has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Katsuhiro Imai has collaborated with top researchers, engineers, and scientists both in Japan and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Katsuhiro Imai's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a trailblazing inventor in the global tech industry.

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