The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Aug. 09, 2018
Ngk Insulators, Ltd., Nagoya, JP;
Morimichi Watanabe, Nagoya, JP;
Kei Sato, Nagoya, JP;
Yoshitaka Kuraoka, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Tsutomu Nanataki, Nagoya, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1° or more and less than 1° and the cross-sectional average diameter Dof the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 μm or more.