Okazaki, Japan

Yoshitaka Kuraoka

This inventor holds 32 USPTO granted patents and 15 published patent applications and 7 EPO patents, primarily in Epitaxial Semiconductor Substrates. Top assignee: Ngk Insulators, Inc.. Active years: 2011-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshitaka Kuraoka. Retrieved from https://idiyas.com/inventor/yoshitaka-kuraoka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32 

% Patents Active = 71.9

 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 29(Granted Patents)


Location History:

  • Anjo, JP (2011 - 2015)
  • Nagoya, JP (2013 - 2020)
  • Okazaki, JP (2015 - 2020)

Company Filing History:


Years Active: 2011-2020

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Areas of Expertise:
Epitaxial Substrate
Gallium Nitride
Light Emitting Device
Semiconductor Device
Polycrystalline Substrate
Composite Substrate
Group III Nitride
Heat Discharge Structures
Vertical External-Cavity Laser
Self-Supported Substrate
Manufacturing Method
Functional Devices
32 patents (USPTO):Explore Patents

Title: Innovations by Yoshitaka Kuraoka in Semiconductor Technology

Introduction

Yoshitaka Kuraoka, located in Okazaki, Japan, is a prominent inventor with a remarkable portfolio of 32 patents. His work primarily focuses on advancements in semiconductor technology, specifically involving group 13 element nitrides. Kuraoka has made significant contributions to the field through innovative inventions that enhance the performance and efficiency of semiconductor materials.

Latest Patents

Among his latest patents, Kuraoka has developed a free-standing substrate comprising polycrystalline group 13 element nitride, which incorporates a plurality of monocrystalline particles with a specific crystal orientation. This substrate includes gallium nitride, aluminum nitride, and indium nitride, featuring surfaces engineered to achieve a root mean square roughness of 3.0 nm or less. Another key invention is an epitaxial substrate for semiconductor elements that effectively suppresses leakage current while ensuring high breakdown voltage. This patent highlights a semi-insulating free-standing substrate made of GaN doped with zinc, paired with a complex layering system designed to enhance semiconductor performance.

Career Highlights

Kuraoka's affiliation with NGK Insulators, Inc. has facilitated his innovative research and development ventures. His expertise in the field of semiconductor technology has positioned him as a key figure within his organization, promoting advances that impact various applications in electronics. His dedication to improving materials and processes has been reflected in the successful completion of multiple patents.

Collaborations

Throughout his career, Kuraoka has collaborated with notable colleagues such as Mikiya Ichimura and Makoto Miyoshi. These partnerships have fostered an environment of innovation, allowing for the exchange of ideas and collaborative problem-solving, which has ultimately led to the advancement of their collective work in semiconductor technology.

Conclusion

Yoshitaka Kuraoka's contributions to the semiconductor industry are both substantial and inspiring. His innovative patents are paving the way for future advancements, ensuring improved performance in electronic devices. As Kuraoka continues to explore new ideas and technologies, the impacts of his work will likely resonate throughout the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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