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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10804432 B1

PDFFull Text
Date of Patent:
Oct. 13, 2020

Filed:

Aug. 09, 2018

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

Applicant:

Ngk Insulators, Ltd., Nagoya, Aichi, JP;

Inventors:

Katsuhiro Imai, Nagoya, JP;

Yoshitaka Kuraoka, Okazaki, JP;

Mikiya Ichimura, Ichinomiya, JP;

Takayuki Hirao, Nisshin, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, Aichi, JP;

Attorney:

Flynn Thiel, P.C.

Primary Examiner:

Seahvosh Nikmanesh

Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 31/0392 (2006.01); H01L 31/16 (2006.01); H01L 21/02 (2006.01); C30B 19/12 (2006.01); C30B 29/40 (2006.01); H01L 31/0304 (2006.01); C30B 19/02 (2006.01); C30B 9/12 (2006.01); C30B 25/18 (2006.01); H01L 29/04 (2006.01); H01L 29/165 (2006.01); H01L 33/18 (2010.01); H01L 33/06 (2010.01); H01L 29/20 (2006.01); H01L 33/16 (2010.01); C30B 29/68 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 9/12 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02625 (2013.01); H01L 21/02628 (2013.01); H01L 29/04 (2013.01); H01L 29/165 (2013.01); H01L 31/03044 (2013.01); H01L 31/0392 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 29/2003 (2013.01); Y02E 10/50 (2013.01);
Abstract

A free-standing substrate of a polycrystalline nitride of a group 13 element contains a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The polycrystalline nitride of the group 13 element is composed of gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof. The free-standing substrate has a top surface and bottom surface. The free-standing substrate contains at least one of zinc and calcium. A root mean square roughness Rms at the top surface is 3.0 nm or less.

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