The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2019
Filed:
Nov. 18, 2016
Ngk Insulators, Ltd., Aichi, JP;
NGK INSULATORS, LTD., Aichi, JP;
Abstract
Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1×10Ω·cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1×10/cmor less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlInGaN (0≤x≤1, 0≤y≤1).