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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10128406 B1

PDFFull Text
Date of Patent:
Nov. 13, 2018

Filed:

Apr. 15, 2016

Gan template substrate

Applicant:

Ngk Insulators, Ltd., Aichi, JP;

Inventors:

Mikiya Ichimura, Ichinomiya, JP;

Yoshitaka Kuraoka, Okazaki, JP;

Masahiko Namerikawa, Seto, JP;

Assignee:

NGK INSULATORS, LTD., Aichi, JP;

Attorneys:

Cermak Nakajima & McGowan LLP

Tomoko Nakajima

Primary Examiner:

Michele Fan

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 33/12 (2010.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C30B 9/10 (2006.01); C30B 19/02 (2006.01); C30B 19/12 (2006.01); C30B 29/68 (2006.01); H01L 29/66 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); C30B 9/10 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/02 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 33/06 (2013.01);
Abstract

A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cmin a Raman spectrum is lower than or equal to 1.8 cm. With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride.

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