The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Aug. 09, 2018
Applicant:
Ngk Insulators, Ltd., Nagoya, Aichi, JP;
Inventors:
Katsuhiro Imai, Nagoya, JP;
Yoshitaka Kuraoka, Okazaki, JP;
Mikiya Ichimura, Ichinomiya, JP;
Takayuki Hirao, Nisshin, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, Aichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/18 (2010.01); H01L 33/06 (2010.01); H01L 31/0392 (2006.01); H01L 33/16 (2010.01); H01L 21/02 (2006.01); C30B 29/68 (2006.01); C30B 19/12 (2006.01); C30B 29/40 (2006.01); H01L 31/0304 (2006.01); C30B 19/02 (2006.01); C30B 9/12 (2006.01); C30B 25/18 (2006.01); H01L 29/04 (2006.01); H01L 29/165 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 9/12 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02625 (2013.01); H01L 21/02628 (2013.01); H01L 29/04 (2013.01); H01L 29/165 (2013.01); H01L 31/03044 (2013.01); H01L 31/0392 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 29/2003 (2013.01); Y02E 10/50 (2013.01);
Abstract
A free-standing substrate of a polycrystalline nitride of a group 13 element is composed of a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The free-standing substrate has a top surface and a bottom surface. The polycrystalline nitride of the group 13 element is gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof and contains zinc at a concentration of 1×10atoms/cmor more and 1×10atoms/cmor less.