The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Dec. 15, 2015
Applicant:
Ngk Insulators, Ltd., Aichi-prefecture, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Aichi-Prefecture, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/02 (2006.01); C30B 9/12 (2006.01); C30B 19/12 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); H01L 33/00 (2010.01); C30B 29/38 (2006.01); H01L 21/20 (2006.01); H01L 21/208 (2006.01);
U.S. Cl.
CPC ...
C30B 19/02 (2013.01); C30B 9/12 (2013.01); C30B 19/12 (2013.01); C30B 25/18 (2013.01); C30B 25/186 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02645 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); C30B 29/38 (2013.01); H01L 21/20 (2013.01); H01L 21/208 (2013.01);
Abstract
A composite substrate includes a polycrystalline ceramic substrate, a silicon substrate directly bonded to the polycrystalline ceramic substrate, a seed crystal film formed on the silicon substrate by vapor phase process and made of a nitride of a group 13 element, and a gallium nitride crystal layer grown on the seed crystal film by flux method.