The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Apr. 27, 2018
Applicant:
Ngk Insulators, Ltd., Nagoya-shi, Aichi, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Nagoya-shi, Aichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/201 (2006.01); H01L 21/205 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01); C30B 19/02 (2006.01); C30B 29/40 (2006.01); H01L 29/205 (2006.01); C23C 16/30 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); C23C 16/303 (2013.01); C23C 16/34 (2013.01); C30B 19/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/205 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/66007 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/812 (2013.01); H01L 29/207 (2013.01);
Abstract
Provided is an epitaxial substrate for semiconductor elements which suppresses an occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN being doped with Zn; a buffer layer being adjacent to the free-standing substrate; a channel layer being adjacent to the buffer layer; and a barrier layer being provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer formed of Al-doped GaN and suppresses diffusion of Zn from the free-standing substrate into the channel layer.