The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Mar. 24, 2017
Ngk Insulators, Ltd., Nagoya-shi, Aichi, JP;
NGK INSULATORS, LTD., Aichi, JP;
Abstract
Provided is a group 13 nitride epitaxial substrate with which the HEMT device having superior characteristics can be manufactured. This epitaxial substrate is provided with: a base substrate composed of SiC and having a main surface with a (0001) plane orientation; a nucleation layer formed on one main surface of the base substrate and composed of AlN; an electron transit layer formed on the nucleation layer and composed of a group 13 nitride with the composition AlGaN (0≤y<1); and a barrier layer formed on the electron transit layer and composed of a group 13 nitride with the composition InAlN (0.13≤z≤0.23) or AlGaN (0.15≤w≤0.35). The (0001) plane of the base substrate has an off angle of 0.1° or more and 0.5° or less, and an intermediate layer composed of a group 13 nitride with the composition AlGaN (0.01 ≤x≤0.4) is further provided between the nucleation layer and the electron transit layer.