The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Mar. 14, 2018
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Takayuki Hirao, Nisshin, JP;
Makoto Iwai, Kasugai, JP;
Katsuhiro Imai, Nagoya, JP;
Takashi Yoshino, Ama, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/12 (2006.01); C30B 9/10 (2006.01); H01L 21/02 (2006.01); C30B 19/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 33/12 (2006.01);
U.S. Cl.
CPC ...
C30B 19/12 (2013.01); C30B 9/10 (2013.01); C30B 19/02 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); C30B 33/12 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/02516 (2013.01); H01L 21/02631 (2013.01); H01L 21/02634 (2013.01);
Abstract
An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm.