Ngk Insulators, Inc.

Toyoda Gosei Co., Ltd.

Osaka University

Other

Katsuhiro Imai

Makoto Iwai

Minoru Imaeda

Takayuki Hirao

Jun Yoshikawa

Takashi Yoshino

Fumio Kawamura

Takatomo Sasaki

Takanao Shimodaira

Mikiya Ichimura

Akihiko Honda

Tsutomu Nanataki

Shiro Yamazaki

Yusuke Mori

Masahiro Sakai

Morimichi Watanabe

Yoshitaka Kuraoka

Yukihisa Takeuchi

Seiji Nagai

Kei Sato

Koichi Kondo

Shuhei Higashihara

Takayuki Sato

Yuichiro Imanishi

Koji Hirata

Tomohiko Sugiyama

Kazuaki Yamaguchi

Nobuyuki Kokune

Shoji Sogo

Tetsuo Taniuchi

Yasuo Kitaoka

Masahiro Murasato

Naoki Shibata

Kiyofumi Chikuma

Masashi Yoshimura

Tatsuo Kawaguchi

Masahiko Namerikawa

Atsushi Onoe

Nobuyuki Kobayashi

Ayako Yoshida

Tsuguo Fukuda

Yoshinori Isoda

Chikashi Ihara

Tetsuya Uchikawa

Yasuhide Yakushi

Hiroki Kobayashi

Kazuki Maeda

Minoru Kawahara

Hiroaki Isobe

Suguru Noguchi

Takashi Wada

Makota Iwai

Yuji Yamada

Toshihisa Yokoyama

Koki Kanno

Group-III element nitride semiconductor substrate including a first surface and a second surface that are easy to visually distinguish from each other. An end portion is easily detected with an optical sensor, a large effective area (area that can be used in device production) can be secured, and warping of the entirety of the substrate is reduced. A Group-III element nitride semiconductor substrate includes a first surface; and a second surface, wherein the first surface is a mirror surface, the second surface has a second-surface central region and a second-surface outer peripheral region, the second-surface central region is a mirror surface, and the second-surface outer peripheral region is a non-mirror surface.

Group-III element nitride semiconductor substrate

It is provided a layer of a nitride of a group 13 element having a first main face and second main face. The layer of the nitride of the group 13 element includes a first void-depleted layer provided on the side of the first main face, a second void-depleted layer provided on the side of the second main face, and the void-distributed layer provided between the first void-depleted layer and second void-depleted layer.

Group 13 nitride layer, composite substrate, and functional element

An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 &#x3bc;m and a width of 5 to 100 &#x3bc;m, and the recesses have a bottom thickness of 2 &#x3bc;m or more and a width of 50 to 500 &#x3bc;m.

Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis

A free-standing substrate of a polycrystalline nitride of a group 13 element contains a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The polycrystalline nitride of the group 13 element is composed of gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof. The free-standing substrate has a top surface and bottom surface. The free-standing substrate contains at least one of zinc and calcium. A root mean square roughness Rms at the top surface is 3.0 nm or less.

Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same

A free-standing substrate of a polycrystalline nitride of a group 13 element is composed of a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The free-standing substrate has a top surface and a bottom surface. The polycrystalline nitride of the group 13 element is gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof and contains zinc at a concentration of 1&#xd7;10atoms/cmor more and 1&#xd7;10atoms/cmor less.

There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1&#xb0; or more and less than 1&#xb0; and the cross-sectional average diameter Dof the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 &#x3bc;m or more.

Polycrystalline gallium nitride self-supported substrate and light emitting element using same

A heat discharge structure that includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

Heat discharge structures for light source devices and light source systems

A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.

Supporting substrate for composite substrate and composite substrate

A self-supporting substrate includes a first nitride layer grown by a hydride vapor deposition method or ammonothermal method and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium; and a second nitride layer grown by a sodium flux method on the first nitride layer and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium. The first nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the first nitride layer. The second nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the second nitride layer. The first nitride layer has a thickness larger than a thickness of the second nitride layer.

Free-standing substrate, function element and method for producing same

It is produced a crystal of a nitride of a group 13 element in a melt including the group 13 element and a flux including at least an alkali metal under atmosphere comprising a nitrogen-containing gas. An amount of carbon is made 0.005 to 0.018 atomic percent, provided that 100 atomic percent is assigned to a total amount of said flux, said group 13 element and carbon in said melt.

Method for producing nitride of group-13 element, and melt composition

A crystal growth apparatus includes a pressure-resistant vessel; a plurality of support tables arranged inside the pressure-resistant vessel; inner vessels each placed over the support tables, respectively; growth vessels contained the inner vessels, respectively; a heating means for heating the growth vessels; and a central rotating shaft connected to the support tables. The central rotating shaft is distant from central axes of the inner vessels, respectively. A seed crystal, a raw material of the Group 13 element and a flux are charged in each of the growth vessels, and the growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to the melt to grow a crystal of a nitride of said Group 13 element while the central rotating shaft is rotated.

System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables

It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

Method for producing nitride crystal

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0&#x2264;(an average thickness (&#x3bc;m) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)&#x2264;10.0 . . . (1); 0.1&#x2264; a warpage (mm) of said composite substrate&#xd7;(50/a diameter (mm) of said composite substrate)&#x2264;0.6 . . . (2); 1.10&#x2264;a maximum value (&#x3bc;m) of a thickness of said layer of said nitride of said group 13 element/a minimum value (&#x3bc;m) of said thickness of said layer of said nitride of said group 13 element . . . (3)

Method for separating group 13 element nitride layer, and composite substrate

Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cmor greater.

Zinc oxide sputtering target

Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

Composite substrate for light-emitting element and production method therefor

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Nagoya, Japan

Katsuhiro Imai