The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Apr. 16, 2019
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Yoshinori Isoda, Ichinomiya, JP;
Suguru Noguchi, Nagoya, JP;
Tetsuya Uchikawa, Nagoya, JP;
Takayuki Hirao, Nisshin, JP;
Takanao Shimodaira, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); C30B 29/38 (2006.01); H01L 21/205 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 29/38 (2013.01); H01L 21/205 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); C30B 25/02 (2013.01);
Abstract
It is provided a layer of a nitride of a group 13 element having a first main face and second main face. The layer of the nitride of the group 13 element includes a first void-depleted layer provided on the side of the first main face, a second void-depleted layer provided on the side of the second main face, and the void-distributed layer provided between the first void-depleted layer and second void-depleted layer.